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K9F5608U0B-YCB00 PDF预览

K9F5608U0B-YCB00

更新时间： 2024-01-08 12:20:47
品牌 Logo 应用领域
三星 - SAMSUNG 光电二极管内存集成电路
页数 文件大小 规格书
30页 628K
描述
Flash, 32MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48

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K9F5608U0B-YCB00 技术参数

生命周期：Obsolete零件包装代码：TSOP1
包装说明：12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48针数：48
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.83
Is Samacsys：N最长访问时间：30 ns
其他特性：CONTAINS ADDITIONAL 8M BIT NAND FLASHJESD-30 代码：R-PDSO-G48
长度：18.4 mm内存密度：268435456 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1端子数量：48
字数：33554432 words字数代码：32000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：32MX8
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL编程电压：2.7 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL类型：NAND TYPE
宽度：12 mmBase Number Matches：1

K9F5608U0B-YCB00 数据手册

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K9F5608U0B  
FLASH MEMORY  
Document Title  
32M x 8 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial issue.  
May. 15th 2001  
Advance  
0.1  
At Read2 operation in X16 device  
Sep. 20th 2001  
: A3 ~ A7 are Don’t care ==> A3 ~ A7 are "L"  
0.2  
1. IOL(R/B) of 1.8V device is changed.  
Nov. 5th 2001  
-min. Value: 7mA -->3mA  
-typ. Value: 8mA -->4mA  
2. AC parameter is changed.  
tRP(min.) : 30ns --> 25ns  
3. WP pin provides hardware protection and is recommended to be kept  
at VIL during power-up and power-down and recovery time of minimum  
1µs is required before internal circuit gets ready for any command  
sequences as shown in Figure 15.  
---> WP pin provides hardware protection and is recommended to be  
kept at VIL during power-up and power-down and recovery time of  
minimum 10µs is required before internal circuit gets ready for any  
command sequences as shown in Figure 15.  
0.3  
0.4  
1. X16 TSOP1 pin is changed.  
: #36 pin is changed from VccQ to N.C .  
Feb. 15th 2002  
Apr. 15th 2002  
1. In X16 device, bad block information location is changed from 256th  
byte to 256th and 261th byte.  
2. tAR1, tAR2 are merged to tAR.(page 12)  
(before revision) min. tAR1 = 20ns , min. tAR2 = 50ns  
(after revision) min. tAR = 10ns  
3. min. tCLR is changed from 50ns to 10ns.(page12)  
4. min. tREA is changed from 35ns to 30ns.(page12)  
5. min. tWC is changed from 50ns to 45ns.(page12)  
6. Unique ID for Copyright Protection is available  
-The device includes one block sized OTP(One Time Programmable),  
which can be used to increase system security or to provide  
identification capabilities. Detailed information can be obtained by  
contact with Samsung.  
7. tRHZ is divide into tRHZ and tOH.(page 12)  
- tRHZ : RE High to Output Hi-Z  
- tOH : RE High to Output Hold  
8. tCHZ is divide into tCHZ and tOH.(page 12)  
- tCHZ : CE High to Output Hi-Z  
- tOH : CE High to Output Hold  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
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