5秒后页面跳转
K7P161811M-HC25 PDF预览

K7P161811M-HC25

更新时间: 2024-11-14 19:23:11
品牌 Logo 应用领域
三星 - SAMSUNG 时钟静态存储器内存集成电路
页数 文件大小 规格书
13页 249K
描述
Standard SRAM, 1MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-119

K7P161811M-HC25 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:BGA, BGA119,7X17,50
针数:119Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:2 ns
最大时钟频率 (fCLK):250 MHzI/O 类型:COMMON
JESD-30 代码:R-PBGA-B119JESD-609代码:e0
长度:22 mm内存密度:18874368 bit
内存集成电路类型:STANDARD SRAM内存宽度:18
功能数量:1端子数量:119
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA119,7X17,50
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.5,3.3 V认证状态:Not Qualified
座面最大高度:2.55 mm最大待机电流:0.15 A
最小待机电流:3.15 V子类别:SRAMs
最大压摆率:0.5 mA最大供电电压 (Vsup):3.45 V
最小供电电压 (Vsup):3.15 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

K7P161811M-HC25 数据手册

 浏览型号K7P161811M-HC25的Datasheet PDF文件第2页浏览型号K7P161811M-HC25的Datasheet PDF文件第3页浏览型号K7P161811M-HC25的Datasheet PDF文件第4页浏览型号K7P161811M-HC25的Datasheet PDF文件第5页浏览型号K7P161811M-HC25的Datasheet PDF文件第6页浏览型号K7P161811M-HC25的Datasheet PDF文件第7页 
K7P163611M  
K7P161811M  
512Kx36 & 1Mx18 SRAM  
Document Title  
512Kx36 & 1Mx18 Synchronous Pipelined SRAM  
Revision History  
Draft Date  
Remark  
Rev. No.  
History  
Aug. 2000  
Advance  
Rev. 0.0  
- Initial Document  
Dec. 2001  
Final  
Rev. 1.0  
- Final specification release  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Rev 1.0  
Dec. 2001  
- 1 -  

与K7P161811M-HC25相关器件

型号 品牌 获取价格 描述 数据表
K7P161811M-HC30 SAMSUNG

获取价格

Standard SRAM, 1MX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-119
K7P161812M-HC38 SAMSUNG

获取价格

Standard SRAM, 1MX18, 3.8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-119
K7P161812M-HC43 SAMSUNG

获取价格

Standard SRAM, 1MX18, 4.3ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-119
K7P161812M-HC48 SAMSUNG

获取价格

Standard SRAM, 1MX18, 4.8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-119
K7P161812M-HC55 SAMSUNG

获取价格

Standard SRAM, 1MX18, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-119
K7P161866A SAMSUNG

获取价格

512Kx36 AND 1Mx18 Synchronous Pipelined SRAM
K7P161866A-HC25 SAMSUNG

获取价格

512Kx36 AND 1Mx18 Synchronous Pipelined SRAM
K7P161866A-HC250 SAMSUNG

获取价格

Standard SRAM, 1MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P161866A-HC30 SAMSUNG

获取价格

512Kx36 AND 1Mx18 Synchronous Pipelined SRAM
K7P161866A-HC300 SAMSUNG

获取价格

Standard SRAM, 1MX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, BGA-119