K7I163682B-FC30T

更新时间： 2024-11-24 13:09:07

品牌	Logo	应用领域
三星 - SAMSUNG		存储内存集成电路静态存储器双倍数据速率时钟
页数	文件大小	规格书
17页	379K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K7I163682B-FC30T 数据手册

K7I163682B

K7I161882B

512Kx36 & 1Mx18 DDRII CIO b2 SRAM

Document Title

512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

1. Initial document.

Advance

Premilinary

Oct. 23. 2002

Oct. 24. 2002

0.1

1. Add the speed bin (-33, -30)

2. Delete the speed bin (-25, -13)

0.2

1. Change the Boundary scan exit order.

2. Correct the Overshoot and Undershoot timing diagram.

Premilinary

Dec. 16, 2002

0.3

0.4

1. Add the speed bin (-25)

Premilinary

Jan. 27, 2003

Mar. 20, 2003

1. Correct the JTAG ID register definition

2. Correct the AC timing parameter (delete the tKHKH Max value)

0.5

0.6

1. Change the Maximum Clock cycle time.

2. Correct the 165FBGA package ball size.

Premilinary

April. 4, 2003

1. Add the power up/down sequencing comment.

2. Update the DC current parameter (Icc and Isb).

3. Change the Max. speed bin from -33 to -30.

June. 20, 2003

0.7

1. Change the ISB1.

Premilinary

Oct. 20. 2003

Speed Bin

From

-30

-25

-20

-16

200

180

160

140

230

210

190

170

1.0

2.0

1. Final spec release

1. Delete the x8 Org.

Final

Oct. 31, 2003

Nov. 28, 2003

2. Delete the 300MHz speed bin

3.0

3.1

1. Add the 300MHz speed bin

Final

June. 18, 2004

July. 28, 2004

1. Change the stand-by current(ISB1)

before

230

after

260

240

220

200

Isb1

-30 :

-25 :

-20 :

-16 :

210

190

170

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

July. 2004

Rev 3.1

- 1 -

12 3 4 5 6 7...17

中文翻译

下载PDF

与K7I163682B-FC30T相关器件

型号	品牌	获取价格	描述	数据表
K7I163682B-FC33	SAMSUNG	获取价格	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
K7I163682B-FI16T	SAMSUNG	获取价格	Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165
K7I163682B-FI250	SAMSUNG	获取价格	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
K7I163682B-FI25T	SAMSUNG	获取价格	Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165
K7I163682B-FI300	SAMSUNG	获取价格	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
K7I163684B	SAMSUNG	获取价格	512Kx36 & 1Mx18 DDRII CIO b4 SRAM
K7I163684B-EC160	SAMSUNG	获取价格	DDR SRAM, 512KX36, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
K7I163684B-EC200	SAMSUNG	获取价格	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
K7I163684B-EC250	SAMSUNG	获取价格	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
K7I163684B-EC25T	SAMSUNG	获取价格	Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165

与K7I163682B-FC30T相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

K7I163682B-FC30T

K7I163682B-FC30T 数据手册

与K7I163682B-FC30T相关器件

与K7I163682B-FC30T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K7I163682B-FC30T

K7I163682B-FC30T 数据手册

与K7I163682B-FC30T相关器件

与K7I163682B-FC30T相关文章

您还可以找

您在本页遇到什么问题？