Datasheet > K7B803625A-QC900

K7B803625A-QC900

更新时间： 2024-11-07 19:52:39

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器内存集成电路
页数	文件大小	规格书
21页	573K
描述
Cache SRAM, 256KX36, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

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K7B803625A-QC900 技术参数

K7B803625A

K7B801825A

256Kx36 & 512Kx18 Synchronous SRAM

Document Title

256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

Revision History

Draft Date

May. 24 . 2000

July. 03. 2000

Rev. No.

History

Remark

0.0

1.0

Initial draft

Preliminary

Final

1. Final spec Release.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

July 2000

- 1 -

Rev 1.0

12 3 4 5 6 7...21

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型号	品牌	获取价格	描述	数据表
K7B803625A-TC10	SAMSUNG	获取价格	Cache SRAM, 256KX36, 10ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B803625A-TC75	SAMSUNG	获取价格	Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B803625A-TC85	SAMSUNG	获取价格	Cache SRAM, 256KX36, 8.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B803625A-TC90	SAMSUNG	获取价格	Cache SRAM, 256KX36, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B803625B	SAMSUNG	获取价格	256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
K7B803625B-HC65	SAMSUNG	获取价格	Cache SRAM, 256KX36, 6.5ns, CMOS, PBGA119, BGA-119
K7B803625B-HC75	SAMSUNG	获取价格	Cache SRAM, 256KX36, 7.5ns, CMOS, PBGA119, BGA-119
K7B803625B-HC85	SAMSUNG	获取价格	Cache SRAM, 256KX36, 8.5ns, CMOS, PBGA119, BGA-119
K7B803625B-HI65	SAMSUNG	获取价格	Cache SRAM, 256KX36, 6.5ns, CMOS, PBGA119, BGA-119
K7B803625B-HI75	SAMSUNG	获取价格	Cache SRAM, 256KX36, 7.5ns, CMOS, PBGA119, BGA-119