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K7A401849A-QC22T PDF预览

K7A401849A-QC22T

更新时间: 2024-11-16 09:55:39
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
16页 421K
描述
Standard SRAM, 256KX18, 2.8ns, CMOS, PQFP100

K7A401849A-QC22T 数据手册

 浏览型号K7A401849A-QC22T的Datasheet PDF文件第2页浏览型号K7A401849A-QC22T的Datasheet PDF文件第3页浏览型号K7A401849A-QC22T的Datasheet PDF文件第4页浏览型号K7A401849A-QC22T的Datasheet PDF文件第5页浏览型号K7A401849A-QC22T的Datasheet PDF文件第6页浏览型号K7A401849A-QC22T的Datasheet PDF文件第7页 
K7A403649A  
K7A401849A  
PRELIMINARY  
128Kx36 & 256Kx18 Synchronous SRAM  
Document Title  
128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM  
Revision History  
Remark  
Rev. No  
Draft Date  
History  
Preliminary  
Preliminary  
Preliminary  
0.0  
0.1  
0.2  
Nov . 05. 1999  
Feb. 10. 2000  
April. 03. 2000  
Initial draft  
Add tCYC 300MHz.  
1. Changed DC condition at Icc and ISB.  
Icc ; from 500mA to 550mA at -30,  
from 450mA to 500mA at -27,  
from 390mA to 440mA at -25,  
from 360mA to 410mA at -22,  
from 340mA to 390mA at -20,  
from 300mA to 350mA at -16,  
ISB ; from 150mA to 160mA at -30,  
from 140mA to 150mA at -27,  
from 130mA to 140mA at -25,  
from 120mA to 130mA at -22,  
from 110mA to 120mA at -20,  
from 90mA to 100mA at -16,  
ISB1 ; from 50mA to 80mA ,  
ISB2 ; from 30mA to 40mA ,  
Preliminary  
Preliminary  
0.3  
0.4  
May. 15. 2000  
July. 25. 2000  
1. Changed input & output capacitance.  
CIN  
; from 6pF to 5pF,  
COUT ; from 8pF to 7pF,  
2.Changed part number  
from K7A4036(18)44A -under 150MHz to K7A4036(18)49A -over167MHz  
Remove 300MHz( -30 )  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
July 2000  
Rev 0.4  

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