Datasheet > K6T4008V1C-YB70T

K6T4008V1C-YB70T

更新时间： 2024-12-02 07:51:47

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
10页	186K
描述
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32,

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K6T4008V1C-YB70T 数据手册

K6T4008V1C, K6T4008U1C Family

CMOS SRAM

Document Title

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No. History

Draft Data

Remark

0.0

0.1

Initial Draft

January 13, 1998

June 12, 1998

Advance

Revisied

Preliminary

- Speed bin change

KM68U4000C : 85/100ns ® 70/85/100ns

- DC Characteristics change

ICC : 5mA at read/write ® 4mA at read

ICC1 : 3mA ® 4mA

ICC2 : 35mA ® 30mA

ISB : 0.5mA ® 0.3mA

ISB1 : 10mA ® 15mA for commercial parts

- Add 32-TSOP1-0820

0.11

1.0

Errata correct

- 32-TSOP1-0813 products: T ® TG

November 7, 1998

January 15, 1999

Finalize

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.0

January 1999

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
K6T4008V1C-YB85	SAMSUNG	获取价格	512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-YB85T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 85ns, CMOS, PDSO32
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