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K6T4008V1B-MB70T PDF预览

K6T4008V1B-MB70T

更新时间: 2024-09-13 11:00:23
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 145K
描述
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32

K6T4008V1B-MB70T 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:TSOP, TSOP32,.46Reach Compliance Code:compliant
风险等级:5.88最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP
封装等效代码:TSOP32,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:3.3 V认证状态:Not Qualified
反向引出线:YES最小待机电流:2 V
子类别:SRAMs最大压摆率:0.045 mA
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

K6T4008V1B-MB70T 数据手册

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K6T4008V1B, K6T4008U1B Family  
CMOS SRAM  
Document Title  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
1.0  
Initial draft  
December 17, 1996  
Januarary 14, 1998  
Preliminary  
Final  
Finalize  
- Change datasheet format  
- Erase low power part from product  
- Erase 70ns part from KM68U4000B family  
- Power dissipation Improved 0.7 to 1.0W  
- VIL(MAX) improved 0.4 to 0.6V.  
- ICC2 decreased 50 to 45mA.  
2.0  
Revised  
February 12, 1998  
Final  
- ICC1 decreased 20 to 25mA  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 2.0  
1
February 1998  

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