5秒后页面跳转
K6T4008V1C-GB70T PDF预览

K6T4008V1C-GB70T

更新时间: 2024-11-30 13:09:07
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
10页 188K
描述
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32

K6T4008V1C-GB70T 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:SOP, SOP32,.56Reach Compliance Code:compliant
风险等级:5.88Is Samacsys:N
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP32,.56
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL电源:3.3 V
认证状态:Not Qualified最小待机电流:2 V
子类别:SRAMs最大压摆率:0.03 mA
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

K6T4008V1C-GB70T 数据手册

 浏览型号K6T4008V1C-GB70T的Datasheet PDF文件第2页浏览型号K6T4008V1C-GB70T的Datasheet PDF文件第3页浏览型号K6T4008V1C-GB70T的Datasheet PDF文件第4页浏览型号K6T4008V1C-GB70T的Datasheet PDF文件第5页浏览型号K6T4008V1C-GB70T的Datasheet PDF文件第6页浏览型号K6T4008V1C-GB70T的Datasheet PDF文件第7页 
K6T4008V1C, K6T4008U1C Family  
CMOS SRAM  
Document Title  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
0.1  
Initial Draft  
January 13, 1998  
June 12, 1998  
Advance  
Revisied  
Preliminary  
- Speed bin change  
KM68U4000C : 85/100ns ® 70/85/100ns  
- DC Characteristics change  
ICC : 5mA at read/write ® 4mA at read  
ICC1 : 3mA ® 4mA  
ICC2 : 35mA ® 30mA  
ISB : 0.5mA ® 0.3mA  
ISB1 : 10mA ® 15mA for commercial parts  
- Add 32-TSOP1-0820  
0.11  
1.0  
Errata correct  
- 32-TSOP1-0813 products: T ® TG  
November 7, 1998  
January 15, 1999  
Finalize  
Final  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 1.0  
January 1999  

与K6T4008V1C-GB70T相关器件

型号 品牌 获取价格 描述 数据表
K6T4008V1C-GB85 SAMSUNG

获取价格

512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-GB85T SAMSUNG

获取价格

Standard SRAM, 512KX8, 85ns, CMOS, PDSO32
K6T4008V1C-GF70 SAMSUNG

获取价格

512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-GF85 SAMSUNG

获取价格

512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-GF85T SAMSUNG

获取价格

Standard SRAM, 512KX8, 85ns, CMOS, PDSO32
K6T4008V1C-MB70 SAMSUNG

获取价格

512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-MB70T SAMSUNG

获取价格

Standard SRAM, 512KX8, 70ns, CMOS, PDSO32
K6T4008V1C-MB85 SAMSUNG

获取价格

512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-MB85T SAMSUNG

获取价格

Standard SRAM, 512KX8, 85ns, CMOS, PDSO32
K6T4008V1C-MF70 SAMSUNG

获取价格

512Kx8 bit Low Power and Low Voltage CMOS Static RAM