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K6T4008U1C-YF10T PDF预览

K6T4008U1C-YF10T

更新时间: 2024-11-30 13:02:39
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三星 - SAMSUNG 存储内存集成电路静态存储器光电二极管
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10页 188K
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K6T4008U1C-YF10T 数据手册

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K6T4008V1C, K6T4008U1C Family  
CMOS SRAM  
Document Title  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
0.1  
Initial Draft  
January 13, 1998  
June 12, 1998  
Advance  
Revisied  
Preliminary  
- Speed bin change  
KM68U4000C : 85/100ns ® 70/85/100ns  
- DC Characteristics change  
ICC : 5mA at read/write ® 4mA at read  
ICC1 : 3mA ® 4mA  
ICC2 : 35mA ® 30mA  
ISB : 0.5mA ® 0.3mA  
ISB1 : 10mA ® 15mA for commercial parts  
- Add 32-TSOP1-0820  
0.11  
1.0  
Errata correct  
- 32-TSOP1-0813 products: T ® TG  
November 7, 1998  
January 15, 1999  
Finalize  
Final  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 1.0  
January 1999  

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