K6T4008C1B-GL70T

更新时间： 2024-09-26 13:09:03

品牌	Logo	应用领域
三星 - SAMSUNG		存储内存集成电路静态存储器光电二极管
页数	文件大小	规格书
9页	173K
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数据手册

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K6T4008C1B-GL70T 数据手册

CMOS SRAM

K6T4008C1B Family

Document Title

512Kx8 bit Low Power CMOS Static RAM

Revision History

Revision No. History

Draft Date

Remark

0.0

Initial Draft

December 7, 1996

Advance

0.1

Revise

March 6, 1997

Preliminary

- Changed Operating current by reticle revision

ICC at write : 35mA ® 45mA

ICC1 at read/write : 15/35mA ® 10/45mA

1.0

Finalize

October 9, 1997

Final

- Changed Operating current

ICC1 at write : 45mA ® 40mA

ICC2; 90mA ® 80mA

- Change test load at 55ns : 100pF ® 50pF

2.0

3.0

Revise

- Change datasheet format

February 17, 1998

Final

Revise

September 8, 1998 Final

- Industrial product speed bin change:70/100ns ® 55/70ns

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 3.0

September 1998

12 3 4 5 6 7...9

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与K6T4008C1B-GL70T相关器件

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