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K6T4008C1B-GP70 PDF预览

K6T4008C1B-GP70

更新时间: 2024-11-28 22:32:51
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三星 - SAMSUNG /
页数 文件大小 规格书
9页 173K
描述
512Kx8 bit Low Power CMOS Static RAM

K6T4008C1B-GP70 数据手册

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CMOS SRAM  
K6T4008C1B Family  
Document Title  
512Kx8 bit Low Power CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial Draft  
December 7, 1996  
Advance  
0.1  
Revise  
March 6, 1997  
Preliminary  
- Changed Operating current by reticle revision  
ICC at write : 35mA ® 45mA  
ICC1 at read/write : 15/35mA ® 10/45mA  
1.0  
Finalize  
October 9, 1997  
Final  
- Changed Operating current  
ICC1 at write : 45mA ® 40mA  
ICC2; 90mA ® 80mA  
- Change test load at 55ns : 100pF ® 50pF  
2.0  
3.0  
Revise  
- Change datasheet format  
February 17, 1998  
Final  
Revise  
September 8, 1998 Final  
- Industrial product speed bin change:70/100ns ® 55/70ns  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 3.0  
1
September 1998  

K6T4008C1B-GP70 替代型号

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