Datasheet > K6T4008C1B-L

K6T4008C1B-L

更新时间： 2024-11-28 22:47:47

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
9页	173K
描述
512Kx8 bit Low Power CMOS Static RAM

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中文翻译

获取价格

数据手册

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K6T4008C1B-L 数据手册

CMOS SRAM

K6T4008C1B Family

Document Title

512Kx8 bit Low Power CMOS Static RAM

Revision History

Revision No. History

Draft Date

Remark

0.0

Initial Draft

December 7, 1996

Advance

0.1

Revise

March 6, 1997

Preliminary

- Changed Operating current by reticle revision

ICC at write : 35mA ® 45mA

ICC1 at read/write : 15/35mA ® 10/45mA

1.0

Finalize

October 9, 1997

Final

- Changed Operating current

ICC1 at write : 45mA ® 40mA

ICC2; 90mA ® 80mA

- Change test load at 55ns : 100pF ® 50pF

2.0

3.0

Revise

- Change datasheet format

February 17, 1998

Final

Revise

September 8, 1998 Final

- Industrial product speed bin change:70/100ns ® 55/70ns

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 3.0

September 1998

12 3 4 5 6 7...9

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与K6T4008C1B-L相关器件

型号	品牌	获取价格	描述	数据表
K6T4008C1B-MB55	SAMSUNG	获取价格	512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-MB70	SAMSUNG	获取价格	512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-MB70T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32
K6T4008C1B-MF55	SAMSUNG	获取价格	512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-MF55T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32
K6T4008C1B-MF70	SAMSUNG	获取价格	512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-MF700	SAMSUNG	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32
K6T4008C1B-P	SAMSUNG	获取价格	512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-VB55	SAMSUNG	获取价格	512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-VB70	SAMSUNG	获取价格	512Kx8 bit Low Power CMOS Static RAM