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K6T0808C1D-RL55 PDF预览

K6T0808C1D-RL55

更新时间: 2024-11-24 22:29:51
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 172K
描述
32Kx8 bit Low Power CMOS Static RAM

K6T0808C1D-RL55 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP1-R, TSSOP28,.53,22
针数:28Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.88Is Samacsys:N
最长访问时间:55 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
长度:11.8 mm内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1-R封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
反向引出线:YES座面最大高度:1.2 mm
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.06 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

K6T0808C1D-RL55 数据手册

 浏览型号K6T0808C1D-RL55的Datasheet PDF文件第2页浏览型号K6T0808C1D-RL55的Datasheet PDF文件第3页浏览型号K6T0808C1D-RL55的Datasheet PDF文件第4页浏览型号K6T0808C1D-RL55的Datasheet PDF文件第5页浏览型号K6T0808C1D-RL55的Datasheet PDF文件第6页浏览型号K6T0808C1D-RL55的Datasheet PDF文件第7页 
K6T0808C1D Family  
CMOS SRAM  
Document Title  
32Kx8 bit Low Power CMOS Static RAM  
Revision History  
Revision No History  
Draft Data  
Remark  
0.0  
0.1  
Initial draft  
May 18, 1997  
Design target  
First revision  
April 1, 1997  
Preliminily  
- KM62256DL/DLI ISB1 = 100 ® 50mA  
KM62256DL-L ISB1 = 20 ® 10mA  
KM62256DLI-L ISB1 = 50 ® 15mA  
- CIN = 6 ® 8pF, CIO = 8 ® 10pF  
- KM62256D-4/5/7 Family  
tOH = 5 ® 10ns  
- KM62256DL/DLI IDR = 50® 30mA  
KM62256DL-L/DLI-L IDR = 30 ® 15mA  
1.0  
Finalize  
November 11, 1997  
Final  
- Remove ICC write value  
- Improved operating current  
ICC2 = 70 ® 60mA  
- Improved standby current  
KM62256DL/DLI ISB1 = 50 ® 30mA  
KM62256DL-L ISB1 = 10 ® 5mA  
KM62256DLI-L ISB1 = 15 ® 5mA  
- Improved data retention current  
KM62256DL/DLI IDR = 30 ® 5mA  
KM62256DL-L/DLI-L IDR = 15 ® 3mA  
- Remove 45ns part from commercial product and 100ns part  
from industrial product.  
Replace test load 100pF to 50pF for 55ns part  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
November 1997  

K6T0808C1D-RL55 替代型号

型号 品牌 替代类型 描述 数据表
KM62256DLRG-5L SAMSUNG

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32Kx8 bit Low Power CMOS Static RAM
KM62256DLRG-5 SAMSUNG

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32Kx8 bit Low Power CMOS Static RAM
KM62256CLRG-5L SAMSUNG

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32Kx8 bit Low Power CMOS Static RAM

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