5秒后页面跳转
K6T0808U1D-GB10 PDF预览

K6T0808U1D-GB10

更新时间: 2024-11-25 14:51:47
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 152K
描述
Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28

K6T0808U1D-GB10 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP28,.45
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.55Is Samacsys:N
最长访问时间:100 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
长度:18.29 mm内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP28,.45
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3 V认证状态:Not Qualified
座面最大高度:3 mm最小待机电流:2 V
子类别:SRAMs最大压摆率:0.035 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8.38 mm
Base Number Matches:1

K6T0808U1D-GB10 数据手册

 浏览型号K6T0808U1D-GB10的Datasheet PDF文件第2页浏览型号K6T0808U1D-GB10的Datasheet PDF文件第3页浏览型号K6T0808U1D-GB10的Datasheet PDF文件第4页浏览型号K6T0808U1D-GB10的Datasheet PDF文件第5页浏览型号K6T0808U1D-GB10的Datasheet PDF文件第6页浏览型号K6T0808U1D-GB10的Datasheet PDF文件第7页 
K6T0808V1D, K6T0808U1D Family  
CMOS SRAM  
Document Title  
32Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No.  
History  
Draft Data  
Remark  
0.0  
Initial draft  
April 1, 1997  
Preliminary  
1.0  
Finalize  
November 12, 1997  
Final  
- Add 70ns part in KM62U256D Family  
- Show ICC read only, and increased value  
ICC = 2mA ® ICC Read = 5mA  
- Seperate ICC1 read and write  
ICC1 = 5mA® ICC1 Read = 5mA, ICC1 Write = 10mA  
- Improved standby current(ISB1)  
Commercial part: 10mA® 5mA  
Extended and Industrial part: 20mA® 5mA  
- Improved VIL(Min.): 0.4V® 0.6V  
- Improved power dissipation: 0.7W® 1W  
1.01  
Errata correction  
October 24, 2001  
Final  
- Removed T’ TL Compatible’from Features  
- Errata correction from 4.5V to 3.0/2.7V for  
DATA RETENTION WAVE FORM  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.01  
October 2001  
1

与K6T0808U1D-GB10相关器件

型号 品牌 获取价格 描述 数据表
K6T0808U1D-GB100 SAMSUNG

获取价格

Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28
K6T0808U1D-GB10T SAMSUNG

获取价格

Standard SRAM, 32KX8, 100ns, CMOS, PDSO28
K6T0808U1D-GB700 SAMSUNG

获取价格

Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28
K6T0808U1D-GB70T SAMSUNG

获取价格

Standard SRAM, 32KX8, 70ns, CMOS, PDSO28
K6T0808U1D-GB85 SAMSUNG

获取价格

Standard SRAM, 32KX8, 85ns, CMOS, PDSO28
K6T0808U1D-GB85T SAMSUNG

获取价格

Standard SRAM, 32KX8, 85ns, CMOS, PDSO28
K6T0808U1D-GD100 SAMSUNG

获取价格

Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28
K6T0808U1D-GD700 SAMSUNG

获取价格

Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28
K6T0808U1D-GF85 SAMSUNG

获取价格

Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28
K6T0808U1D-GF850 SAMSUNG

获取价格

Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28