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K6T0808U1D-GB70T PDF预览

K6T0808U1D-GB70T

更新时间: 2024-11-25 15:36:07
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 152K
描述
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28

K6T0808U1D-GB70T 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SOP, SOP28,.45Reach Compliance Code:compliant
风险等级:5.88最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e0内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP28,.45封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:3 V认证状态:Not Qualified
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.035 mA标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

K6T0808U1D-GB70T 数据手册

 浏览型号K6T0808U1D-GB70T的Datasheet PDF文件第2页浏览型号K6T0808U1D-GB70T的Datasheet PDF文件第3页浏览型号K6T0808U1D-GB70T的Datasheet PDF文件第4页浏览型号K6T0808U1D-GB70T的Datasheet PDF文件第5页浏览型号K6T0808U1D-GB70T的Datasheet PDF文件第6页浏览型号K6T0808U1D-GB70T的Datasheet PDF文件第7页 
K6T0808V1D, K6T0808U1D Family  
CMOS SRAM  
Document Title  
32Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No.  
History  
Draft Data  
Remark  
0.0  
Initial draft  
April 1, 1997  
Preliminary  
1.0  
Finalize  
November 12, 1997  
Final  
- Add 70ns part in KM62U256D Family  
- Show ICC read only, and increased value  
ICC = 2mA ® ICC Read = 5mA  
- Seperate ICC1 read and write  
ICC1 = 5mA® ICC1 Read = 5mA, ICC1 Write = 10mA  
- Improved standby current(ISB1)  
Commercial part : 10mA® 5mA  
Extended and Industrial part : 20mA® 5mA  
- Improved VIL(Min.) : 0.4V® 0.6V  
- Improved power dissipation : 0.7W® 1W  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
November 1997  
1

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