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K6T0808U1D-GB10T PDF预览

K6T0808U1D-GB10T

更新时间: 2024-11-25 14:51:47
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 152K
描述
Standard SRAM, 32KX8, 100ns, CMOS, PDSO28

K6T0808U1D-GB10T 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:SOP, SOP28,.45Reach Compliance Code:compliant
风险等级:5.88Is Samacsys:N
最长访问时间:100 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP28,.45
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL电源:3 V
认证状态:Not Qualified最小待机电流:2 V
子类别:SRAMs最大压摆率:0.035 mA
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

K6T0808U1D-GB10T 数据手册

 浏览型号K6T0808U1D-GB10T的Datasheet PDF文件第2页浏览型号K6T0808U1D-GB10T的Datasheet PDF文件第3页浏览型号K6T0808U1D-GB10T的Datasheet PDF文件第4页浏览型号K6T0808U1D-GB10T的Datasheet PDF文件第5页浏览型号K6T0808U1D-GB10T的Datasheet PDF文件第6页浏览型号K6T0808U1D-GB10T的Datasheet PDF文件第7页 
K6T0808V1D, K6T0808U1D Family  
CMOS SRAM  
Document Title  
32Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No.  
History  
Draft Data  
Remark  
0.0  
Initial draft  
April 1, 1997  
Preliminary  
1.0  
Finalize  
November 12, 1997  
Final  
- Add 70ns part in KM62U256D Family  
- Show ICC read only, and increased value  
ICC = 2mA ® ICC Read = 5mA  
- Seperate ICC1 read and write  
ICC1 = 5mA® ICC1 Read = 5mA, ICC1 Write = 10mA  
- Improved standby current(ISB1)  
Commercial part : 10mA® 5mA  
Extended and Industrial part : 20mA® 5mA  
- Improved VIL(Min.) : 0.4V® 0.6V  
- Improved power dissipation : 0.7W® 1W  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
November 1997  
1

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