Datasheet > K6R1004C1B-C10

K6R1004C1B-C10

更新时间： 2024-09-15 03:47:07

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
8页	127K
描述
256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

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数据手册

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K6R1004C1B-C10 数据手册

PRELIMINARY

Preliminary

CMOS SRAM

PRELIMINARY

K6R1004C1B-C

Document Title

256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out.

Revision History

RevNo.

Rev. 0.0

Rev.1.0

History

Draft Data

Remark

Initial release with Design Target.

Apr. 1st, 1997

Jun. 1st, 1997

Design Target

Preliminary

Release to Preliminary Data Sheet.

1.1. Replace Design Target to Preliminary.

Rev.2.0

Release to Final Data Sheet.

2.1. Delete Preliminary.

Feb. 25th, 1998

Final

2.2. Delete L-version.

2.3. Delete Data Retention Characteristics and Waveform.

2.4. Delete Industrial Temperature Range Part.

2.5. Delete TSOP2 Package.

2.6. Add Capacitive load of the test environment in A.C test load.

2.7. Change D.C characteristics.

Previous spec.

(8/10/12ns part)

150/140/130mA

30mA

Changed spec.

(8/10/12ns part)

150/145/140mA

50mA

Items

ICC

ISB

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 2.0

February 1998

- 1 -

12 3 4 5 6 7 8

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K6R1004C1B-C12	SAMSUNG	获取价格	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
K6R1004C1B-C8	SAMSUNG	获取价格	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
K6R1004C1B-J10	SAMSUNG	获取价格	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
K6R1004C1B-J12	SAMSUNG	获取价格	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
K6R1004C1B-J8	SAMSUNG	获取价格	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
K6R1004C1B-JC08	SAMSUNG	获取价格	Standard SRAM, 256KX4, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K6R1004C1B-JC10	SAMSUNG	获取价格	Standard SRAM, 256KX4, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K6R1004C1B-JC12	SAMSUNG	获取价格	Standard SRAM, 256KX4, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K6R1004C1B-JC12T	SAMSUNG	获取价格	Standard SRAM, 256KX4, 12ns, CMOS, PDSO32
K6R1004C1B-JC8T	SAMSUNG	获取价格	Standard SRAM, 256KX4, 8ns, CMOS, PDSO32