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K6R1004C1C-JI120 PDF预览

K6R1004C1C-JI120

更新时间: 2024-11-07 09:48:39
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 98K
描述
Standard SRAM, 256KX4, 12ns, CMOS, PDSO32

K6R1004C1C-JI120 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SOJ, SOJ32,.44Reach Compliance Code:compliant
风险等级:5.88最长访问时间:12 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J32
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:4端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ32,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified最大待机电流:0.005 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.07 mA标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

K6R1004C1C-JI120 数据手册

 浏览型号K6R1004C1C-JI120的Datasheet PDF文件第2页浏览型号K6R1004C1C-JI120的Datasheet PDF文件第3页浏览型号K6R1004C1C-JI120的Datasheet PDF文件第4页浏览型号K6R1004C1C-JI120的Datasheet PDF文件第5页浏览型号K6R1004C1C-JI120的Datasheet PDF文件第6页浏览型号K6R1004C1C-JI120的Datasheet PDF文件第7页 
PRELIMINARY  
PRELIMINARY  
CMOS SRAM  
K6R1004C1C-C/C-L, K6R1004C1C-I/C-P  
Document Title  
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).  
Revision History  
Rev.No.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Preliminary  
Final  
Initial release with Preliminary.  
Aug. 5. 1998  
Mar. 3. 1999  
Release to Final Data Sheet.  
1.1. Delete Preliminary.  
Rev. 2.0  
Rev. 3.0  
Add 10ns & Low Power Ver.  
Delete 20ns speed bin  
Apr. 24. 2000  
Sep. 24. 2001  
Final  
Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Revision 3.0  
September 2001  
- 1 -  

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