5秒后页面跳转
K6R1004C1D-JC10 PDF预览

K6R1004C1D-JC10

更新时间: 2024-11-08 21:54:31
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 190K
描述
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

K6R1004C1D-JC10 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ, SOJ32,.44
针数:32Reach Compliance Code:compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.92Is Samacsys:N
最长访问时间:10 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-J32JESD-609代码:e0
长度:20.96 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:4
功能数量:1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ32,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:5 V认证状态:Not Qualified
座面最大高度:3.76 mm最大待机电流:0.005 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.065 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:10.16 mmBase Number Matches:1

K6R1004C1D-JC10 数据手册

 浏览型号K6R1004C1D-JC10的Datasheet PDF文件第2页浏览型号K6R1004C1D-JC10的Datasheet PDF文件第3页浏览型号K6R1004C1D-JC10的Datasheet PDF文件第4页浏览型号K6R1004C1D-JC10的Datasheet PDF文件第5页浏览型号K6R1004C1D-JC10的Datasheet PDF文件第6页浏览型号K6R1004C1D-JC10的Datasheet PDF文件第7页 
PRELIMINARY  
PRELIMINARY  
K6R1004C1D  
CMOS SRAM  
Document Title  
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).  
Revision History  
Rev.No.  
History  
Draft Data  
Remark  
Rev. 0.0  
Rev. 0.1  
Rev. 0.2  
Initial release with Preliminary.  
Current modify  
June. 8. 2001  
September. 9. 2001  
December. 18. 2001  
Preliminary  
Preliminary  
Preliminary  
1. Delete 15ns speed bin.  
2. Change Icc for Industrial mode.  
Item  
Previous  
85mA  
75mA  
Current  
75mA  
65mA  
10ns  
ICC(Industrial)  
12ns  
Rev. 1.0  
1. Final datasheet release.  
2. Delete UB,LB releated AC characteristics and timing diagram.  
June. 19. 2002  
Final  
Rev. 2.0  
Rev. 3.0  
1. Delete 12ns speed bin.  
July. 8. 2002  
July. 26, 2004  
Final  
Final  
1. Add the Lead Free Package type.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev. 3.0  
July 2004  
- 1 -  

与K6R1004C1D-JC10相关器件

型号 品牌 获取价格 描述 数据表
K6R1004C1D-JC15 SAMSUNG

获取价格

Standard SRAM, 256KX4, 15ns, CMOS, PDSO32
K6R1004C1D-JCI10/12 SAMSUNG

获取价格

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industria
K6R1004C1D-JI10 SAMSUNG

获取价格

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1D-JI100 SAMSUNG

获取价格

Standard SRAM, 256KX4, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K6R1004C1D-KC10 SAMSUNG

获取价格

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1D-KI10 SAMSUNG

获取价格

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1D-KI100 SAMSUNG

获取价格

Standard SRAM, 256KX4, 10ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, PLASTIC, SOJ-32
K6R1004V1A-JC15 SAMSUNG

获取价格

Standard SRAM, 256KX4, 15ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K6R1004V1B-12 SAMSUNG

获取价格

SRAM
K6R1004V1B-JC08 SAMSUNG

获取价格

Standard SRAM, 256KX4, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32