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K6L0908V2A-YF100 PDF预览

K6L0908V2A-YF100

更新时间: 2024-11-11 20:56:39
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 193K
描述
Standard SRAM, 64KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32

K6L0908V2A-YF100 技术参数

生命周期:Obsolete零件包装代码:TSOP1
包装说明:TSSOP,针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.84
Is Samacsys:N最长访问时间:100 ns
JESD-30 代码:R-PDSO-G32长度:11.8 mm
内存密度:524288 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:8 mm
Base Number Matches:1

K6L0908V2A-YF100 数据手册

 浏览型号K6L0908V2A-YF100的Datasheet PDF文件第2页浏览型号K6L0908V2A-YF100的Datasheet PDF文件第3页浏览型号K6L0908V2A-YF100的Datasheet PDF文件第4页浏览型号K6L0908V2A-YF100的Datasheet PDF文件第5页浏览型号K6L0908V2A-YF100的Datasheet PDF文件第6页浏览型号K6L0908V2A-YF100的Datasheet PDF文件第7页 
K6L0908V2A, K6L0908U2A Family  
CMOS SRAM  
Document Title  
64Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
0.1  
Design target  
January 17, 1996  
April 15, 1996  
Advance  
Initial draft  
Preliminary  
- One datasheet for commercial, extended and industrial product.  
- Add 85ns part on KM68V512AFamily.  
1.0  
2.0  
Finalize  
June 17, 1996  
Final  
Final  
Revise  
September 10, 1996  
- Add 32-sTSOP type package on product.  
3.0  
Revise  
February 12, 1998  
Final  
- Change datasheet format  
- Improve power dissipation 0.7 to 1.0W  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 3.0  
February 1998  

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