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K6L1008U2C-RF10T PDF预览

K6L1008U2C-RF10T

更新时间: 2024-01-11 10:59:46
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 210K
描述
Standard SRAM, 128KX8, 100ns, CMOS, PDSO32

K6L1008U2C-RF10T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSSOP, TSSOP32,.8,20Reach Compliance Code:compliant
风险等级:5.92最长访问时间:100 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
电源:3 V认证状态:Not Qualified
反向引出线:YES最小待机电流:2 V
子类别:SRAMs最大压摆率:0.035 mA
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
Base Number Matches:1

K6L1008U2C-RF10T 数据手册

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K6L1008V2C, K6L1008U2C Family  
CMOS SRAM  
Document Title  
128K x8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
1.0  
Initial draft  
July 3, 1996  
Preliminary  
Finalize  
December 16, 1996  
Final  
- Increased ISB, IDR  
Commercial part = 10mA  
Industrial part = 20mA  
2.0  
Revise  
November 25, 1997  
Final  
- Change speed bin  
KM68V1000C Family: 70/85ns ® 70/100ns  
KM68U1000C Family: 70/100ns ® 85/100ns  
- Improved operating current: 40mA ® 35mA  
- Improved power dissipation  
PD: 0.7W ® 1.0W  
- Improved standby current  
Extended/Industrial: 20 ® 10mA  
- VIL: 0.4V ® 0.6V  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 2.0  
November 1997  
1

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