Datasheet > K6L1008U2C-GF85T

K6L1008U2C-GF85T

更新时间： 2024-11-12 06:11:03

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
11页	210K
描述
Standard SRAM, 128KX8, 85ns, CMOS, PDSO32

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K6L1008U2C-GF85T 数据手册

K6L1008V2C, K6L1008U2C Family

CMOS SRAM

Document Title

128K x8 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No. History

Draft Data

Remark

0.0

1.0

Initial draft

July 3, 1996

Preliminary

Finalize

December 16, 1996

Final

- Increased ISB, IDR

Commercial part = 10mA

Industrial part = 20mA

2.0

Revise

November 25, 1997

Final

- Change speed bin

KM68V1000C Family: 70/85ns ® 70/100ns

KM68U1000C Family: 70/100ns ® 85/100ns

- Improved operating current: 40mA ® 35mA

- Improved power dissipation

PD: 0.7W ® 1.0W

- Improved standby current

Extended/Industrial: 20 ® 10mA

- VIL: 0.4V ® 0.6V

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 2.0

November 1997

12 3 4 5 6 7...11

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与K6L1008U2C-GF85T相关器件

型号	品牌	获取价格	描述	数据表
K6L1008U2C-NB10	SAMSUNG	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32
K6L1008U2C-NB85	SAMSUNG	获取价格	Standard SRAM, 128KX8, 85ns, CMOS, PDSO32, 8 X 13.40 MM, REVERSE, STSOP1-32
K6L1008U2C-NB85T	SAMSUNG	获取价格	Standard SRAM, 128KX8, 85ns, CMOS, PDSO32
K6L1008U2C-ND10	SAMSUNG	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, REVERSE, STSOP1-32
K6L1008U2C-ND10T	SAMSUNG	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32
K6L1008U2C-NF10T	SAMSUNG	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32
K6L1008U2C-NF85	SAMSUNG	获取价格	Standard SRAM, 128KX8, 85ns, CMOS, PDSO32, 8 X 13.40 MM, REVERSE, STSOP1-32
K6L1008U2C-NF85T	SAMSUNG	获取价格	Standard SRAM, 128KX8, 85ns, CMOS, PDSO32
K6L1008U2C-RB85T	SAMSUNG	获取价格	Standard SRAM, 128KX8, 85ns, CMOS, PDSO32
K6L1008U2C-RD85T	SAMSUNG	获取价格	Standard SRAM, 128KX8, 85ns, CMOS, PDSO32