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K4T1G084QF-BIF7T PDF预览

K4T1G084QF-BIF7T

更新时间: 2024-10-28 09:39:31
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
44页 1051K
描述
DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60

K4T1G084QF-BIF7T 数据手册

 浏览型号K4T1G084QF-BIF7T的Datasheet PDF文件第2页浏览型号K4T1G084QF-BIF7T的Datasheet PDF文件第3页浏览型号K4T1G084QF-BIF7T的Datasheet PDF文件第4页浏览型号K4T1G084QF-BIF7T的Datasheet PDF文件第5页浏览型号K4T1G084QF-BIF7T的Datasheet PDF文件第6页浏览型号K4T1G084QF-BIF7T的Datasheet PDF文件第7页 
Rev. 1.2, Jan. 2012  
K4T1G084QF  
K4T1G164QF  
1Gb F-die DDR2 SDRAM Industrial  
60FBGA/84FBGA with Lead-Free & Halogen-Free  
(RoHS compliant)  
datasheet  
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND  
SPECIFICATIONS WITHOUT NOTICE.  
Products and specifications discussed herein are for reference purposes only. All information discussed  
herein is provided on an "AS IS" basis, without warranties of any kind.  
This document and all information discussed herein remain the sole and exclusive property of Samsung  
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property  
right is granted by one party to the other party under this document, by implication, estoppel or other-  
wise.  
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or  
similar applications where product failure could result in loss of life or personal or physical harm, or any  
military or defense application, or any governmental procurement to which special terms or provisions  
may apply.  
For updates or additional information about Samsung products, contact your nearest Samsung office.  
All brand names, trademarks and registered trademarks belong to their respective owners.  
2012 Samsung Electronics Co., Ltd. All rights reserved.  
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