是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TSOP2 | 包装说明: | TSOP2, TSOP54,.46,32 |
针数: | 54 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.02 |
风险等级: | 5.3 | Is Samacsys: | N |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 5.4 ns |
其他特性: | AUTO/SELF REFRESH | 最大时钟频率 (fCLK): | 133 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 1,2,4,8 |
JESD-30 代码: | R-PDSO-G54 | 长度: | 22.22 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 8 | 湿度敏感等级: | 2 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 54 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 8MX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP2 |
封装等效代码: | TSOP54,.46,32 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 峰值回流温度(摄氏度): | 260 |
电源: | 3.3 V | 认证状态: | Not Qualified |
刷新周期: | 4096 | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 连续突发长度: | 1,2,4,8,FP |
最大待机电流: | 0.001 A | 子类别: | DRAMs |
最大压摆率: | 0.085 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 宽度: | 10.16 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S640832K-UC75T | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPL | |
K4S640832K-UL750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPL | |
K4S640832N | SAMSUNG |
获取价格 |
SDRAM Product Guide | |
K4S640832N-LC75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54 | |
K4S640832N-LC750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND | |
K4S640832N-LC75T | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54 | |
K4S640832N-LL75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54 | |
K4S640832N-LL750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND | |
K4S640832N-LL75T | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54 | |
K4S641622A-TL10 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54 |