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K4S640832N-LL75T PDF预览

K4S640832N-LL75T

更新时间: 2024-11-09 21:05:31
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器光电二极管内存集成电路
页数 文件大小 规格书
15页 358K
描述
Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54

K4S640832N-LL75T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TSOP, TSOP54,.46,32Reach Compliance Code:unknown
风险等级:5.84最长访问时间:5.4 ns
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PDSO-G54
内存密度:67108864 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:8端子数量:54
字数:8388608 words字数代码:8000000
最高工作温度:70 °C最低工作温度:
组织:8MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP
封装等效代码:TSOP54,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE电源:3.3 V
认证状态:Not Qualified刷新周期:4096
连续突发长度:1,2,4,8,FP最大待机电流:0.002 A
子类别:DRAMs最大压摆率:0.11 mA
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUALBase Number Matches:1

K4S640832N-LL75T 数据手册

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K4S640832N  
K4S641632N  
Synchronous DRAM  
64Mb N-die SDRAM Specification  
54 TSOP-II  
with Lead-Free and Halogen-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE  
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-  
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-  
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT  
GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.12 August 2008  
1 of 15  

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