5秒后页面跳转
K4S560832D-NL750 PDF预览

K4S560832D-NL750

更新时间: 2024-11-21 14:42:59
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 80K
描述
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 7.62 X 14 MM, 0.50 MM PITCH, STSOP2-54

K4S560832D-NL750 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSSOP,
针数:54Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.24
风险等级:5.9访问模式:FOUR BANK PAGE BURST
最长访问时间:5.4 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PDSO-G54长度:14 mm
内存密度:268435456 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:8功能数量:1
端口数量:1端子数量:54
字数:33554432 words字数代码:32000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:7.6 mmBase Number Matches:1

K4S560832D-NL750 数据手册

 浏览型号K4S560832D-NL750的Datasheet PDF文件第2页浏览型号K4S560832D-NL750的Datasheet PDF文件第3页浏览型号K4S560832D-NL750的Datasheet PDF文件第4页浏览型号K4S560832D-NL750的Datasheet PDF文件第5页浏览型号K4S560832D-NL750的Datasheet PDF文件第6页浏览型号K4S560832D-NL750的Datasheet PDF文件第7页 
K4S560832D  
CMOS SDRAM  
256Mbit SDRAM  
8M x 8bit x 4 Banks  
Synchronous DRAM  
LVTTL  
Revision 0.0  
May. 2002  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 0.0 May. 2002  

与K4S560832D-NL750相关器件

型号 品牌 获取价格 描述 数据表
K4S560832D-TC/L1H SAMSUNG

获取价格

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832D-TC/L1L SAMSUNG

获取价格

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832D-TC/L75 SAMSUNG

获取价格

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832D-TC/L7C SAMSUNG

获取价格

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832D-TC1H SAMSUNG

获取价格

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
K4S560832D-TC1L SAMSUNG

获取价格

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
K4S560832D-TC75 SAMSUNG

获取价格

Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S560832D-TC7A SAMSUNG

获取价格

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
K4S560832D-TC7C SAMSUNG

获取价格

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
K4S560832D-TL1H SAMSUNG

获取价格

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD