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K4S560832H-TL75 PDF预览

K4S560832H-TL75

更新时间: 2024-11-12 05:24:19
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管
页数 文件大小 规格书
14页 199K
描述
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

K4S560832H-TL75 数据手册

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SDRAM 256Mb H-die (x4, x8, x16)  
CMOS SDRAM  
256Mb H-die SDRAM Specification  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.0 October 2005  

与K4S560832H-TL75相关器件

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Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMP
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Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMP
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256Mb J-die SDRAM Specification
K4S560832J-UC75 SAMSUNG

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Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54,
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Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54
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K4S560832N SAMSUNG

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256Mb N-die SDRAM
K4S560832N-LC75 SAMSUNG

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Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN F