5秒后页面跳转
K4S561632A-TC1LT PDF预览

K4S561632A-TC1LT

更新时间: 2023-02-26 13:38:25
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 127K
描述
Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54

K4S561632A-TC1LT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSOP, TSOP54,.46,32Reach Compliance Code:unknown
风险等级:5.92最长访问时间:6 ns
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PDSO-G54
JESD-609代码:e0内存密度:268435456 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
端子数量:54字数:16777216 words
字数代码:16000000最高工作温度:70 °C
最低工作温度:组织:16MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP封装等效代码:TSOP54,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
电源:3.3 V认证状态:Not Qualified
刷新周期:8192连续突发长度:1,2,4,8,FP
最大待机电流:0.002 A子类别:DRAMs
最大压摆率:0.2 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL

K4S561632A-TC1LT 数据手册

 浏览型号K4S561632A-TC1LT的Datasheet PDF文件第2页浏览型号K4S561632A-TC1LT的Datasheet PDF文件第3页浏览型号K4S561632A-TC1LT的Datasheet PDF文件第4页浏览型号K4S561632A-TC1LT的Datasheet PDF文件第5页浏览型号K4S561632A-TC1LT的Datasheet PDF文件第6页浏览型号K4S561632A-TC1LT的Datasheet PDF文件第7页 
K4S561632A  
CMOS SDRAM  
256Mbit SDRAM  
4M x 16bit x 4 Banks  
Synchronous DRAM  
LVTTL  
Revision 0.0  
Sep. 1999  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 0.0 Sep. 1999  

与K4S561632A-TC1LT相关器件

型号 品牌 获取价格 描述 数据表
K4S561632A-TC75 SAMSUNG

获取价格

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632A-TC750 SAMSUNG

获取价格

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632A-TC75T SAMSUNG

获取价格

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54
K4S561632A-TC80 SAMSUNG

获取价格

Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632A-TC800 SAMSUNG

获取价格

Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632A-TC80T SAMSUNG

获取价格

Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54,
K4S561632A-TL1H SAMSUNG

获取价格

Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632A-TL1H0 SAMSUNG

获取价格

Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632A-TL1HT SAMSUNG

获取价格

Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54
K4S561632A-TL1L SAMSUNG

获取价格

Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54