Datasheet > 存储 > DRAM> K4S561632B-TC/L75

K4S561632B-TC/L75

更新时间： 2024-02-11 01:26:34

品牌	Logo	应用领域
三星 - SAMSUNG		存储动态存储器
页数	文件大小	规格书
11页	133K
描述
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

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K4S561632B-TC/L75 技术参数

K4S561632B

CMOS SDRAM

256Mbit SDRAM

4M x 16bit x 4 Banks

Synchronous DRAM

LVTTL

Revision 0.2

May. 2000

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 0.2 May.2000

12 3 4 5 6 7...11

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型号	品牌	获取价格	描述	数据表
K4S561632B-TC/L80	SAMSUNG	获取价格	DRAM
K4S561632B-TC1H	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632B-TC1L	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632B-TC1L0	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632B-TC750	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632B-TL1H	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632B-TL1H0	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632B-TL1L	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632B-TL1L0	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S561632B-TL75	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54