Datasheet > K4S511533F-F1H

K4S511533F-F1H

更新时间： 2024-11-10 22:13:23

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	109K
描述
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4S511533F-F1H 数据手册

K4S511533F - Y(P)C/L/F

Mobile SDRAM

8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

FEATURES

GENERAL DESCRIPTION

• 3.0V & 3.3V power supply.

The K4S511533F is 536,870,912 bits synchronous high data

rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• 2 /CS Support.

• 2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S511533F-Y(P)C/L/F75

K4S511533F-Y(P)C/L/F1H

K4S511533F-Y(P)C/L/F1L

133MHz(CL3), 111MHz(CL2)

111MHz(CL2)

54 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL=3)*1, 83MHz(CL2)

- Y(P)C/L/F : Normal / Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur

pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

Address configuration

Organization

Bank

Row

Column Address

32M x16

BA0,BA1

A0 - A12

A0 - A8

September 2004

12 3 4 5 6 7...12

中文翻译

下载PDF

与K4S511533F-F1H相关器件

型号	品牌	获取价格	描述	数据表
K4S511533F-F1L	SAMSUNG	获取价格	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511533F-F75	SAMSUNG	获取价格	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511533F-L	SAMSUNG	获取价格	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511533F-PC1L0	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S511533F-PC750	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S511533F-PF1H0	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S511533F-PF1L0	SAMSUNG	获取价格	暂无描述
K4S511533F-PF750	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S511533F-PL1H0	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S511533F-PL1L0	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54

与K4S511533F-F1H相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

K4S511533F-F1H

K4S511533F-F1H 数据手册

与K4S511533F-F1H相关器件

与K4S511533F-F1H相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K4S511533F-F1H

K4S511533F-F1H 数据手册

与K4S511533F-F1H相关器件

与K4S511533F-F1H相关文章

您还可以找

您在本页遇到什么问题？