Datasheet > K4S51153LF

K4S51153LF

更新时间： 2024-02-17 09:51:32

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	109K
描述
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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中文翻译

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数据手册

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K4S51153LF 数据手册

K4S51153LF - Y(P)C/L/F

Mobile SDRAM

8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

FEATURES

GENERAL DESCRIPTION

• VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

The K4S51153LF is 536,870,912 bits synchronous high data

rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• 2 /CS Support.

• 2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S51163LF-Y(P)C/L/F75

K4S51163LF-Y(P)C/L/F1H

K4S51163LF-Y(P)C/L/F1L

133MHz(CL3), 111MHz(CL2)

111MHz(CL2)

54 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL=3)*1, 83MHz(CL2)

- Y(P)C/L/F : Normal / Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur

pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

Address configuration

Organization

Bank

Row

Column Address

32M x16

BA0,BA1

A0 - A12

A0 - A8

September 2004

12 3 4 5 6 7...12

中文翻译

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与K4S51153LF相关器件

型号	品牌	获取价格	描述	数据表
K4S51153PF	SAMSUNG	获取价格	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S51153PF-PF1L0	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S51153PF-PF750	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S51153PF-PF900	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S51153PF-YF	SAMSUNG	获取价格	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S51153PF-YF1L	SAMSUNG	获取价格	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S51153PF-YF1L0	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54
K4S51153PF-YF75	SAMSUNG	获取价格	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S51153PF-YF750	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, FBGA-54
K4S51153PF-YF90	SAMSUNG	获取价格	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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