是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | TFBGA, |
针数: | 54 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.28 |
风险等级: | 5.5 | Is Samacsys: | N |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 7 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PBGA-B54 |
JESD-609代码: | e1 | 长度: | 11.5 mm |
内存密度: | 536870912 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 54 | 字数: | 33554432 words |
字数代码: | 32000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | -25 °C |
组织: | 32MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 10 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S51153PF-YF | SAMSUNG |
获取价格 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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K4S51153PF-YF1L | SAMSUNG |
获取价格 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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K4S51153PF-YF1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54 |
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K4S51153PF-YF75 | SAMSUNG |
获取价格 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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K4S51153PF-YF750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, FBGA-54 |
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K4S51153PF-YF90 | SAMSUNG |
获取价格 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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K4S51153PF-YF900 | SAMSUNG |
获取价格 |
Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54 |
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K4S51153PF-YPF | SAMSUNG |
获取价格 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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K4S51153PF-YPF1L | SAMSUNG |
获取价格 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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K4S511632B-CL75 | SAMSUNG |
获取价格 |
512Mb B-die SDRAM Specification |
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