Datasheet > K4S51153PF-YPF1L

K4S51153PF-YPF1L

更新时间： 2024-02-23 17:29:21

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	108K
描述
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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中文翻译

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数据手册

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K4S51153PF-YPF1L 数据手册

K4S51153PF - Y(P)F

Mobile SDRAM

8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

FEATURES

GENERAL DESCRIPTION

• VDD/VDDQ =1.8V/1.8V.

The K4S51153PF is 536,870,912 bits synchronous high data

rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• 2 /CS Support.

• 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S51153PF-Y(P)F75

K4S51153PF-Y(P)F90

K4S51153PF-Y(P)F1L

133MHz(CL=3),83MHz(CL=2)

111MHz(CL=3),83MHz(CL=2)

54 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL=3)^*1,66MHz(CL=2)

- F : Low Power, Commercial Temperature(-25°C ~ 70°C)

Notes :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

Address configuration

Organization

Bank

Row

Column Address

32M x16

BA0,BA1

A0 - A12

A0 - A8

September 2004

12 3 4 5 6 7...12

中文翻译

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与K4S51153PF-YPF1L相关器件

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K4S511632B-CL75	SAMSUNG	获取价格	512Mb B-die SDRAM Specification
K4S511632B-TC75	SAMSUNG	获取价格	512Mb B-die SDRAM Specification
K4S511632B-TC750	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, TSOP-54
K4S511632B-TCL75	SAMSUNG	获取价格	512Mb B-die SDRAM Specification
K4S511632B-TL750	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, TSOP-54
K4S511632B-UC75	SAMSUNG	获取价格	512Mb B-die SDRAM Specification
K4S511632B-UC75T	SAMSUNG	获取价格	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FRE
K4S511632C	SAMSUNG	获取价格	DDP 512Mbit SDRAM
K4S511632C-KC	SAMSUNG	获取价格	DDP 512Mbit SDRAM
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