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K4S511632C-KC1H PDF预览

K4S511632C-KC1H

更新时间: 2023-04-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 60K
描述
Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

K4S511632C-KC1H 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSOP54,.46,32针数:54
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.28风险等级:5.83
访问模式:FOUR BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):100 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PDSO-G54长度:22.22 mm
内存密度:536870912 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:33554432 words字数代码:32000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP54,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
电源:3.3 V认证状态:Not Qualified
刷新周期:8192座面最大高度:1.2 mm
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.004 A子类别:DRAMs
最大压摆率:0.38 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

K4S511632C-KC1H 数据手册

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K4S511632C  
CMOS SDRAM  
DDP 512Mbit SDRAM  
8M x 16bit x 4 Banks  
Synchronous DRAM  
LVTTL  
Revision 0.1  
Sept. 2001  
This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM  
products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,  
work stations or desk top personal computers (hereinafter "Prohibited Computer Use"). Applications such as mobile, including cell phones,  
telecom, including televisions and display monitors, or non-desktop computer systems, including laptops, notebook computers, are,  
however, permissible. "Multi-Die Plastic" is defined as two or more Dram die encapsulated within a single plastic leaded package  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 0.1 Sept. 2001  

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