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K4S510832B-KL1H PDF预览

K4S510832B-KL1H

更新时间: 2023-01-03 04:43:26
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管
页数 文件大小 规格书
11页 60K
描述
Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

K4S510832B-KL1H 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSOP54,.46,32针数:54
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.28风险等级:5.83
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:5.4 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PDSO-G54
长度:22.22 mm内存密度:536870912 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:8
功能数量:1端口数量:1
端子数量:54字数:67108864 words
字数代码:64000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP54,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE电源:3.3 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:1.2 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.004 A
子类别:DRAMs最大压摆率:0.235 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

K4S510832B-KL1H 数据手册

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K4S510832B  
CMOS SDRAM  
DDP 512Mbit SDRAM  
16M x 8bit x 4 Banks  
Synchronous DRAM  
LVTTL  
Revision 0.2  
April 2001  
This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM  
products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,  
work stations or desk top personal computers (hereinagter " Prohibited Computer Use"). Applications such as mobile, including cell phones,  
telecom, including televisions and display monitors, or non-desktop computer systems, including laptops, notebook computers, are,  
however, permissible. "Multi-Die Plastic" is defined as two or more DRAM die encapsulated within a single plastic leaded package.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev.0.2 April 2001  

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