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K4S510832B-UL75 PDF预览

K4S510832B-UL75

更新时间: 2024-02-06 01:46:51
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器光电二极管内存集成电路
页数 文件大小 规格书
15页 149K
描述
Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54

K4S510832B-UL75 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:TSOP, TSOP54,.46,32
Reach Compliance Code:compliant风险等级:5.84
最长访问时间:5.4 ns最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PDSO-G54内存密度:536870912 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:8
湿度敏感等级:3端子数量:54
字数:67108864 words字数代码:64000000
最高工作温度:70 °C最低工作温度:
组织:64MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP
封装等效代码:TSOP54,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
刷新周期:8192连续突发长度:1,2,4,8
最大待机电流:0.002 A子类别:DRAMs
最大压摆率:0.1 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

K4S510832B-UL75 数据手册

 浏览型号K4S510832B-UL75的Datasheet PDF文件第2页浏览型号K4S510832B-UL75的Datasheet PDF文件第3页浏览型号K4S510832B-UL75的Datasheet PDF文件第4页浏览型号K4S510832B-UL75的Datasheet PDF文件第5页浏览型号K4S510832B-UL75的Datasheet PDF文件第6页浏览型号K4S510832B-UL75的Datasheet PDF文件第7页 
CMOS SDRAM  
SDRAM 512Mb B-die (x4, x8, x16)  
512Mb B-die SDRAM Specification  
54 TSOP-II with Pb-Free  
(RoHS compliant)  
Revision 1.1  
August 2004  
* Samsung Electronics reserves the right to change products or specification without notice.  
Revision. 1.1 August 2004  

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Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMP
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Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMP
K4S510832D-UL750 SAMSUNG

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Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMP
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