Datasheet > K4M64163LK-RN75T

K4M64163LK-RN75T

更新时间： 2024-11-12 08:13:39

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	113K
描述
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54

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K4M64163LK-RN75T 数据手册

K4M64163LK - R(B)N/G/L/F

Mobile-SDRAM

1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

FEATURES

GENERAL DESCRIPTION

• 2.5V power supply.

The K4M64163LK is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 54Balls FBGA( -RXXX -Pb, -BXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4M64163LK-R(B)N/G/L/F75

K4M64163LK-R(B)N/G/L/F1H

K4M64163LK-R(B)N/G/L/F1L

133MHz(CL=3),111MHz(CL=2)

111MHz(CL=2)

54 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL=3)^*1,83MHz(CL=2)

- R(B)N/G : Low Power, Extended Temperature(-25°C ~ 85°C)

- R(B)L/F : Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur

pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

January 2006

12 3 4 5 6 7...12

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与K4M64163LK-RN75T相关器件

型号	品牌	获取价格	描述	数据表
K4M64163PH	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
K4M64163PH-BF1L	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M64163PH-BF750	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54
K4M64163PH-BF90	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M64163PH-BF900	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54
K4M64163PH-BG1L	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M64163PH-BG75	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54
K4M64163PH-BG750	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54
K4M64163PH-BG90	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M64163PH-BG900	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54

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