是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | VFBGA, |
针数: | 54 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.02 |
风险等级: | 5.73 | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 7 ns | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | S-PBGA-B54 | JESD-609代码: | e0 |
长度: | 8 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 16 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 54 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装形状: | SQUARE |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 峰值回流温度(摄氏度): | 230 |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 8 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4M64163PK | SAMSUNG |
获取价格 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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K4M64163PK-BC1L | SAMSUNG |
获取价格 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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K4M64163PK-BC75 | SAMSUNG |
获取价格 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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K4M64163PK-BC750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54 |
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K4M64163PK-BC90 | SAMSUNG |
获取价格 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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K4M64163PK-BC900 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 |
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K4M64163PK-BE1L | SAMSUNG |
获取价格 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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K4M64163PK-BE1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 |
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K4M64163PK-BE75 | SAMSUNG |
获取价格 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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K4M64163PK-BE750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54 |
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