Datasheet > K4M64163PH-RG1L

K4M64163PH-RG1L

更新时间： 2024-11-11 20:53:35

品牌	Logo	应用领域
三星 - SAMSUNG		时钟动态存储器内存集成电路
页数	文件大小	规格书
12页	114K
描述
Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54

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技术参数
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K4M64163PH-RG1L 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.79
最长访问时间：	7 ns	最大时钟频率 (fCLK)：	111 MHz
I/O 类型：	COMMON	交错的突发长度：	1,2,4,8
JESD-30 代码：	S-PBGA-B54	JESD-609代码：	e0
内存密度：	67108864 bit	内存集成电路类型：	SYNCHRONOUS DRAM
内存宽度：	16	端子数量：	54
字数：	4194304 words	字数代码：	4000000
最高工作温度：	85 °C	最低工作温度：	-25 °C
组织：	4MX16	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	FBGA
封装等效代码：	BGA54,9X9,32	封装形状：	SQUARE
封装形式：	GRID ARRAY, FINE PITCH	电源：	1.8 V
认证状态：	Not Qualified	刷新周期：	4096
连续突发长度：	1,2,4,8,FP	最大待机电流：	0.0003 A
子类别：	DRAMs	最大压摆率：	0.05 mA
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
Base Number Matches：	1

K4M64163PH-RG1L 数据手册

K4M64163PH - R(B)G/F

Mobile-SDRAM

1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

FEATURES

• 1.8V power supply.

GENERAL DESCRIPTION

The K4M64163PH is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

fabricated with SAMSUNG′s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock, and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 54Balls FBGA with 0.8mm ball pitch.

( -RXXX : Leaded, -BXXX : Lead Free)

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4M64163PH-R(B)G/F75

K4M64163PH-R(B)G/F90

K4M64163PH-R(B)G/F1L

133MHz(CL=3), 83MHz(CL=2)

111MHz(CL=3), 83MHz(CL=2)

54 FBGA Leaded

(Lead Free)

LVCMOS

111MHz(CL=3)^*1, 66MHz(CL=2)

- R(B)G : Low Power, Extended Temperature(-25°C ~ 85°C)

- R(B)F : Low Power, Commercial Temperature(-25°C ~ 70°C)

Notes :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

February 2004

12 3 4 5 6 7...12

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与K4M64163PH-RG1L相关器件

型号	品牌	获取价格	描述	数据表
K4M64163PH-RG900	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54
K4M64163PK	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK-BC1L	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK-BC75	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK-BC750	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4M64163PK-BC90	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK-BC900	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4M64163PK-BE1L	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK-BE1L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4M64163PK-BE75	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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