Datasheet > K4M64163PH-RG

K4M64163PH-RG

更新时间： 2024-02-26 07:42:22

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	116K
描述
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4M64163PH-RG 数据手册

K4M64163PH - R(B)G/F

Mobile-SDRAM

1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP

FEATURES

• 1.8V power supply.

GENERAL DESCRIPTION

The K4M64163PH is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

fabricated with SAMSUNG′s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock, and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 54Balls CSP with 0.8mm ball pitch( -RXXX -Pb, -BXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4M64163PH-R(B)G/F75

K4M64163PH-R(B)G/F90

K4M64163PH-R(B)G/F1L

133MHz(CL3), 83MHz(CL2)

111MHz(CL3), 83MHz(CL2)

54 CSP Pb

(Pb Free)

LVCMOS

111MHz(CL=3)^*1, 66MHz(CL2)

- R(B)G : Low Power, Extended Temperature(-25°C ~ 85°C)

- R(B)F : Low Power, Commercial Temperature(-25°C ~ 70°C)

Notes :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is

potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product

contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

December 2003

12 3 4 5 6 7...12

中文翻译

下载PDF

与K4M64163PH-RG相关器件

型号	品牌	获取价格	描述	数据表
K4M64163PH-RG1L	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M64163PH-RG900	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54
K4M64163PK	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK-BC1L	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK-BC75	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK-BC750	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4M64163PK-BC90	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK-BC900	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4M64163PK-BE1L	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK-BE1L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54

与K4M64163PH-RG相关文章

SMMBT3904LT1G数据手册：参数分析与替代型号推荐
2024-06-27

1
LL4148手册解读：参数分析、产品特性
2024-06-27

1
BSS138DW手册解读：引脚信息、电气参数分析
2024-06-27

1
共享储能电站：数据驱动与政策引领下的黄金机遇
2024-06-26

13

产品中心

服务支持

精选活动

关于我们

帮助中心

K4M64163PH-RG

K4M64163PH-RG 数据手册

与K4M64163PH-RG相关器件

与K4M64163PH-RG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K4M64163PH-RG

K4M64163PH-RG 数据手册

与K4M64163PH-RG相关器件

与K4M64163PH-RG相关文章

您还可以找

您在本页遇到什么问题？