K4E660412E-TI45T

更新时间： 2024-02-03 04:16:03

品牌	Logo	应用领域
三星 - SAMSUNG		存储
页数	文件大小	规格书
21页	194K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4E660412E-TI45T 数据手册

Industrial Temperature

K4E660412E,K4E640412E

CMOS DRAM

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random

access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor-

mal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated

using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES

• Extended Data Out Mode operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• Fast parallel test mode capability

• LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Part Identification

- K4E660412E-JI/P(3.3V, 8K Ref., SOJ)

- K4E640412E-JI/P(3.3V, 4K Ref., SOJ)

- K4E660412E-TI/P(3.3V, 8K Ref., TSOP)

- K4E640412E-TI/P(3.3V, 4K Ref., TSOP)

• Active Power Dissipation

Unit : mW

Speed

-45

• Available in Plastic SOJ and TSOP(II) packages

• +3.3V±0.3V power supply

324

288

252

432

396

360

-50

•

Industrial Temperature operating ( -40~85°C )

-60

• Refresh Cycles

FUNCTIONAL BLOCK DIAGRAM

Part

NO.

Refresh

cycle

Refresh time

Normal

L-ver

RAS

CAS

Vcc

Vss

Control

Clocks

K4E660412E*

K4E640412E

64ms

128ms

VBB Generator

* Access mode & RAS only refresh mode

: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)

CAS -before-RAS & Hidden refresh mode

Row Decoder

Refresh Timer

Data in

Buffer

Refresh Control

Memory Array

: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)

DQ0

DQ3

16,777,216 x 4

Refresh Counter

• Performance Range

Cells

Speed

-45

Data out

Buffer

tRAC

45ns

50ns

60ns

tCAC

12ns

13ns

15ns

tRC

tHPC

17ns

20ns

25ns

Row Address Buffer

A0~A12

(A0~A11)*1

74ns

84ns

104ns

Col. Address Buffer

Column Decoder

A0~A10

(A0~A11)*1

-50

-60

Note) *1 : 4K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...21

中文翻译

下载PDF

与K4E660412E-TI45T相关器件

型号	品牌	获取价格	描述	数据表
K4E660412E-TI50	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E660412E-TI500	SAMSUNG	获取价格	暂无描述
K4E660412E-TI50T	SAMSUNG	获取价格	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,
K4E660412E-TI60	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E660412E-TI60T	SAMSUNG	获取价格	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,
K4E660412E-TP45	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E660412E-TP45T	SAMSUNG	获取价格	EDO DRAM, 16MX4, 45ns, CMOS, PDSO32,
K4E660412E-TP50	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E660412E-TP500	SAMSUNG	获取价格	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,
K4E660412E-TP60	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out

与K4E660412E-TI45T相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

7
PMOS管背靠背连接：串联还是并联？
2024-06-28

7
高压电解电容的分类与选型策略
2024-06-28

8
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

14

产品中心

服务支持

精选活动

关于我们

帮助中心

K4E660412E-TI45T

K4E660412E-TI45T 数据手册

与K4E660412E-TI45T相关器件

与K4E660412E-TI45T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K4E660412E-TI45T

K4E660412E-TI45T 数据手册

与K4E660412E-TI45T相关器件

与K4E660412E-TI45T相关文章

您还可以找

您在本页遇到什么问题？