是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | TSOP, TSOP32,.46 | Reach Compliance Code: | compliant |
风险等级: | 5.83 | Is Samacsys: | N |
最长访问时间: | 45 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-G32 | 内存密度: | 67108864 bit |
内存集成电路类型: | EDO DRAM | 内存宽度: | 4 |
端子数量: | 32 | 字数: | 16777216 words |
字数代码: | 16000000 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 16MX4 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP | 封装等效代码: | TSOP32,.46 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
电源: | 3.3 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 自我刷新: | YES |
最大待机电流: | 0.0002 A | 子类别: | DRAMs |
最大压摆率: | 0.12 mA | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4E660412E-TP50 | SAMSUNG |
获取价格 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out | |
K4E660412E-TP500 | SAMSUNG |
获取价格 |
EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, | |
K4E660412E-TP60 | SAMSUNG |
获取价格 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out | |
K4E660412E-TP600 | SAMSUNG |
获取价格 |
EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, | |
K4E660811B-TC450 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | |
K4E660811C-JC500 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | |
K4E660811C-TC50 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | |
K4E660811C-TC500 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | |
K4E660811D-JC500 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, SOJ-32 | |
K4E660811D-TC600 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, TSOP2-32 |