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JS28F320C3BD90

更新时间： 2024-01-13 04:10:14
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路闪存
页数 文件大小 规格书
70页 638K
描述
Flash, 2MX16, 90ns, PDSO48, 12 X 20 MM, LEAD FREE, TSOP-48

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JS28F320C3BD90 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TSOP
包装说明：12 X 20 MM, LEAD FREE, TSOP-48针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.46
最长访问时间：90 ns其他特性：USER-SELECTABLE 3V OR 12V VPP
启动块：BOTTOM命令用户界面：YES
通用闪存接口：YES数据轮询：NO
JESD-30 代码：R-PDSO-G48长度：18.4 mm
内存密度：33554432 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
部门数/规模：8,63端子数量：48
字数：2097152 words字数代码：2000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：2MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：1.8/3.3,3/3.3 V
编程电压：3 V认证状态：Not Qualified
座面最大高度：1.2 mm部门规模：4K,32K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.055 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：NO
类型：NOR TYPE宽度：12 mm
Base Number Matches：1

JS28F320C3BD90 数据手册

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C3 Discrete  
Revision History  
Date of  
Version  
Revision  
Description  
05/12/98  
-001  
Original version  
48-Lead TSOP package diagram change  
μBGA package diagrams change  
32-Mbit ordering information change (Section 6)  
CFI Query Structure Output Table Change (Table C2)  
CFI Primary-Vendor Specific Extended Query Table Change for Optional Features and  
Command Support change (Table C8)  
07/21/98  
-002  
Protection Register Address Change  
I
test conditions clarification (Section 4.3)  
μBGA package top side mark information clarification (Section 6)  
PPD  
Byte-Wide Protection Register Address change  
V
V
CCS  
Specification change (Section 4.3)  
IH  
IL  
Maximum Specification change (Section 4.3)  
10/03/98  
12/04/98  
-003  
-004  
I
test conditions clarification (Section 4.3)  
Added Command Sequence Error Note (Table 7)  
Datasheet renamed from 3 Volt Advanced Boot Block, 8-, 16-, 32-Mbit Flash Memory  
Family.  
Added t  
/t  
and t  
(Section 4.6)  
QVBL  
BHWH BHEH  
Programming the Protection Register clarification (Section 3.4.2)  
12/31/98  
02/24/99  
-005  
-006  
Removed all references to x8 configurations  
Removed reference to 40-Lead TSOP from front page  
Added Easy BGA package (Section 1.2)  
Removed 1.8 V I/O references  
06/10/99  
-007  
Locking Operations Flowchart changed (Appendix B)  
Added t  
(Section 4.6)  
WHGL  
CFI Primary Vendor-Specific Extended Query changed (Appendix C)  
Max I changed to 25 µA  
Table 10, added note indicating V Max = 3.3 V for 32-Mbit device  
CC  
CCD  
03/20/00  
04/24/00  
-008  
-009  
Added specifications for 0.18 micron product offerings throughout document Added 64-  
Mbit density  
Changed references of 32Mbit 80ns devices to 70ns devices to reflect the faster product  
offering.  
10/12/00  
-010  
Changed VccMax=3.3V reference to indicate that the affected product is the 0.25μm  
32Mbit device.  
Minor text edits throughout document.  
Added 1.8v I/O operation documentation where applicable  
Added TSOP PCN ‘Pin-1’ indicator information  
Changed references in 8 x 8 BGA pinout diagrams from ‘GND’ to ‘Vssq’  
Added ‘Vssq’ to Pin Descriptions Information  
Removed 0.4 µm references in DC characteristics table  
Corrected 64Mb package Ordering Information from 48-uBGA to 48-VFBGA  
Corrected ‘bottom’ parameter block sizes to on 8Mb device to 8 x 4KWords  
Minor text edits throughout document  
7/20/01  
-011  
10/02/01  
2/05/02  
-012  
-013  
Added specifications for 0.13 micron product offerings throughout document  
Corrected Iccw / Ippw / Icces /Ippes values.  
Added mechanicals for 16Mb and 64Mb  
Minor text edits throughout document.  
Updated 64Mb product offerings.  
Updated 16Mb product offerings.  
4/05/02  
3/06/03  
-014  
-016  
Revised and corrected DC Characteristics Table.  
Added mechanicals for Easy BGA.  
Minor text edits throughout document.  
Complete technical update.  
March 2008  
290645-24  
Datasheet  
5
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