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JS28F320C3TD70 PDF预览

JS28F320C3TD70

更新时间: 2024-02-22 16:48:32
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路闪存
页数 文件大小 规格书
70页 638K
描述
Flash, 2MX16, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, TSOP-48

JS28F320C3TD70 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TSOP
包装说明:12 X 20 MM, LEAD FREE, TSOP-48针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.18
最长访问时间:70 ns其他特性:USER-SELECTABLE 3V OR 12V VPP
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PDSO-G48JESD-609代码:e3
长度:18.4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,63
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:1.8/3.3,3/3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:4K,32K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.055 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40切换位:NO
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

JS28F320C3TD70 数据手册

 浏览型号JS28F320C3TD70的Datasheet PDF文件第2页浏览型号JS28F320C3TD70的Datasheet PDF文件第3页浏览型号JS28F320C3TD70的Datasheet PDF文件第4页浏览型号JS28F320C3TD70的Datasheet PDF文件第5页浏览型号JS28F320C3TD70的Datasheet PDF文件第6页浏览型号JS28F320C3TD70的Datasheet PDF文件第7页 
Numonyx™ Advanced+ Boot Block Flash  
Memory (C3)  
28F800C3, 28F160C3, 28F320C3 (x16)  
Datasheet  
Product Features  
„ Flexible SmartVoltage Technology  
— 2.7 V– 3.6 V read/program/erase  
— 12 V for fast production programming  
„ 1.65 V to 2.5 V or 2.7 V to 3.6 V I/O Option  
— Reduces overall system power  
„ High Performance  
„ 128-bit Protection Register  
— 64 bit unique device identifier  
— 64 bit user programmable OTP cells  
„ Extended Cycling Capability  
— Minimum 100,000 block erase cycles  
„ Software  
— 2.7 V– 3.6 V: 70 ns max access time  
— Supported by Numonyx Advanced Flash  
File Managers -- Numonyx™ VFM,  
Numonyx™ FDI, etc.  
„ Optimized Architecture for Code Plus Data  
Storage  
— Code and data storage in the same  
memory device  
— Eight 4 Kword blocks, top or bottom  
parameter boot  
— Robust Power Loss Recovery for Data Loss  
Prevention  
— Common Flash Interface  
„ Standard Surface Mount Packaging  
— 48-Ball μBGA*/VFBGA  
— 64-Ball Easy BGA packages  
— 48-TSOP package  
„ Intel ETOX* VIII (0.13 μm) Flash Technology  
— 8, 16, 32 Mbit  
— Up to 127 x 32 Kword blocks  
— Fast program suspend capability  
— Fast erase suspend capability  
„ Flexible Block Locking  
— Lock/unlock any block  
— Full protection on power-up  
— Write Protect (WP#) pin for hardware block  
protection  
„ Low Power Consumption  
„ Intel ETOX* VII (0.18 μm) Flash Technology  
— 16, 32 Mbit  
„ Intel ETOX* VI (0.25 μm) Flash Technology  
— 8, 16 and 32 Mbit  
— 9 mA typical read  
— 7 uA typical standby with Automatic Power  
Savings feature  
„ Extended Temperature Operation  
— -40 °C to +85 °C  
290645-24  
March 2008  

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