Datasheet > JME070-18

JME070-18

更新时间： 2024-11-04 01:10:39

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描述
Chip - double mesa SCRs of reverse blocking high-voltage

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JME070-18 数据手册

JIEJIE MICROELECTRONICS CO.,Ltd

JME070-12/16/18/20

Description:

1) Chip: double mesa SCRs of reverse blocking high-voltage

2) Chip area: 9.8mm×9.8mm (edge gate thyristor)

3) Technology: mesa glass passivation technology, multilayer metallization

technology and non-void welding by vacuum welding technology

Typical Application:

Reactive power compensation, solid state relay, power module, etc.

Absolute Maximum Ratings (Packaged into modules, unless otherwise specified, T_C=25℃)

Parameter

Test Conditions

Symbol

T_j

Values

Unit

℃

Operating junction temperature range

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Average on-state current

-40-125

T_j=25℃

V_DRM

V_RRM

I_T(AV)

I_TSM

1200/1600/1800/2000

T_j=25℃

T_C=80℃

tp=10ms

1200/1600/1800/2000

Peak on-state surge current

I²t value for fusing

1500

11250

I²t

A²s

V_D=2/3V_DRMI_G=0.3A

tp=200μs T_j=125℃

dI_G/dt=0.3A/μs

Critical rate of rise of on-state current

dI/dt

150

A/μs

Electrical Characteristics (Packaged into modules, unless otherwise specified, T_C=25℃)

Parameter

Peak on-state voltage

Test Conditions

Symbol

Values

Unit

I_T=210A tp=380μs

V_TM

≤1.8

V_D=V_DRM

T_C=25℃

T_C=125℃

V_R=V_RRM

T_C=25℃

T_C=125℃

Repetitive peak off-state current

Repetitive peak reverse current

I_DRM1

I_DRM2

≤50

≤10

μA

I_RRM1

I_RRM2

I_GT

≤50

≤10

μA

Triggering gate current

Latching current

V_D=12V R_L=30Ω

10-80

≤200

≤150

≤2

I_G=1.2 I_GT

I_L

Holding current

I_T=1A

I_H

V_D=12V R_L=30Ω

Triggering gate voltage

V_GT

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