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JMH65R190APLN PDF预览

JMH65R190APLN

更新时间: 2024-11-04 14:55:07
品牌 Logo 应用领域
捷捷微 - JJM 高压
页数 文件大小 规格书
6页 358K
描述
高压 MOSFET (≥ 400V)

JMH65R190APLN 数据手册

 浏览型号JMH65R190APLN的Datasheet PDF文件第2页浏览型号JMH65R190APLN的Datasheet PDF文件第3页浏览型号JMH65R190APLN的Datasheet PDF文件第4页浏览型号JMH65R190APLN的Datasheet PDF文件第5页浏览型号JMH65R190APLN的Datasheet PDF文件第6页 
JMH65R190APLN  
650V SuperJunction Power MOSFET  
Features  
Product Summary  
Parameter  
Value  
650  
3.5  
Unit  
V
Extremely Low Gate Charge  
Excellent Output Capacitance (Coss) Profile  
VDS  
VGS(th)_Typ  
D (@ VGS = 10V) (1)  
V
Fast Switching Capability  
I
17.4  
169  
5.2  
A
RDS(ON)_Typ (@ VGS = 10V)  
Eoss@400V  
100% UIS Tested, 100% Rg Tested  
Pb-free Lead Plating  
m  
J  
Halogen-free and RoHS-compliant  
Applications  
Telecom / Server Power Supplies  
Industrial Power Supplies  
UPS / Solar  
Lighting / Charger / Adapter  
Pin Configuration  
DFN8080-4L  
Top View  
Bottom View  
5
Top View  
4
3
2
1
Ordering Information  
Device  
TJ (°C)  
Package  
# of Pins  
Marking  
MSL  
Media  
Quantity (pcs)  
JMH65R190APLN-13  
DFN8080-4L  
4
H65R190A  
1
-55 to 150  
13-inch Reel  
3000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
VDS  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
650  
±30  
VGS  
V
TC = 25°C  
17.4  
11.0  
75  
Continuous Drain  
Current (1)  
ID  
A
TC = 100°C  
Pulsed Drain Current (2)  
Avalanche Current (3)  
Avalanche Energy (3)  
IDM  
IAS  
A
A
9.0  
EAS  
405  
mJ  
TC = 25°C  
156  
Power Dissipation (4)  
PD  
W
TC = 100°C  
63  
Junction & Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
RDS(ON) vs. VGS  
Gate Charge  
10  
VDS = 325V  
ID = 10A  
8
6
4
2
0
ID = 10A  
0
10  
20  
30  
Qg (nC)  
40  
50  
JieJie Microelectronics Co., Ltd.  
Rev. 1.0  
Page 1 of 6  
All product information are copyrighted and subject to legal disclaimers  

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