JIEJIE MICROELECTRONICS CO.,Ltd
JME045-16/18/20
Description:
1) Chip: double mesa SCRs of reverse blocking high-voltage
2) Chip area: 7.6mm×7.6mm (corner gate thyristor)
3) Technology: mesa glass passivation technology, multilayer metallization
technology and non-void welding by vacuum welding technology
Typical Application:
Reactive power compensation, solid state relay, power module, etc.
Absolute Maximum Ratings (Packaged into modules, unless otherwise specified, TC=25℃)
Parameter
Test Conditions
Symbol
Tj
Values
-40-125
Unit
℃
V
Operating junction temperature range
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Tj=25℃
Tj=25℃
TC=80℃
tp=10ms
tp=10ms
VDRM
VRRM
IT(AV)
ITSM
1600/1800/2000
1600/1800/2000
45
V
A
Peak on-state surge current
I2t value for fusing
700
A
A2s
I2t
2450
VD=2/3VDRM IG=0.3A
tp=200μs Tj=125℃
dIG/dt=0.3A/μs
Critical rate of rise of on-state current
dI/dt
150
A/μs
Electrical Characteristics (Packaged into modules, unless otherwise specified, TC=25℃)
Parameter
Peak on-state voltage
Test Conditions
Symbol
Values
Unit
IT=135A tp=380μs
VTM
≤1.8
V
VD=VDRM
TC=25℃
TC=125℃
VR=VRRM
TC=25℃
TC=125℃
Repetitive peak off-state current
Repetitive peak reverse current
IDRM1
IDRM2
≤20
≤10
μA
mA
IRRM1
IRRM2
IGT
≤20
≤10
μA
mA
Triggering gate current
Latching current
VD=12V RL=30Ω
10-80
≤150
≤120
≤2
mA
mA
mA
V
IG=1.2 IGT
IL
Holding current
IT=1A
IH
VD=12V RL=30Ω
Triggering gate voltage
Non triggering gate voltage
VGT
VGD
VD=VDRM Tj=125℃
≥0.25
V
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http://www.jjwdz.com