Datasheet > JANTXVF2N7268

JANTXVF2N7268

更新时间： 2024-09-26 14:56:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1505K
描述
Rad hard, 100V, 34A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 krad(Si) TID, QPL

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JANTXVF2N7268 数据手册

IRHM7150 (JANSR2N7268)

PD-90675F

Radiation Hardened Power MOSFET

Thru-Hole (TO-254AA)

100V, 34A, N-channel, Rad Hard HEXFET™ Technology

Features

Product Summary



Single event effect (SEE) hardened



BV_DSS: 100V

I_D: 34A

R_DS(on),max: 65m

Q_G,max: 160nC

REF: MIL-PRF-19500/603

Low R_DS(on)

Low total gate charge

Simple drive requirements

Hermetically sealed

Electrically isolated

Ceramic eyelets

ESD rating: Class 3A per MIL-STD-750, Method 1020

Potential Applications



DC-DC converter

Motor drives

TO-254AA



Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This

technology has over a decade of proven performance and reliability in satellite applications. These devices have

been characterized for both Total Dose and Single Event Effects (SEE). The combination of low R_DS(on)and low

gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching

and temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHM7150

Ordering options

Package

Screening Level

COTS

TID Level

TO-254AA

100 krad(Si)

300 krad(Si)

500 krad(Si)

JANSR2N7268

IRHM3150

JANS

COTS

JANSF2N7268

IRHM4150

JANS

COTS

JANSG2N7268

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 13

www.infineon.com/irhirel

2022-05-16

12 3 4 5 6 7...13

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