Datasheet > JANTXVF2N7389

JANTXVF2N7389

更新时间： 2024-11-06 14:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1201K
描述
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, QPL

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JANTXVF2N7389 数据手册

PD-90882H

IRHF9130

JANSR2N7389

100V, P-CHANNEL

REF: MIL-PRF-19500/630

RADIATION HARDENED

POWER MOSFET

THRU-HOLE TO-205AF (TO-39)

RAD Hard™HEXFET ^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

IRHF9130

100 kRads(Si)

300 kRads(Si)

-6.5A

JANSR2N7389

JANSF2N7389

0.30

IRHF93130

TO-39

Description

Features

IR HiRel RADHard™ HEXFET^®MOSFET technology

provides high performance power MOSFETs for space

applications. This technology has long history of proven

performance and reliability in satellite applications. These

devices have been characterized for both Total Dose and

Single Event Effects (SEE). The combination of low RDS(on)

and low gate charge reduces the power losses in switching

applications such as DC to DC converters and motor control.

These devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Proton Tolerant

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

 Light Weight

 ESD Rating: Class 1B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-6.5

-4.1

-26

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

0.2

V_GS

E_AS

Gate-to-Source Voltage

± 20

165

Single Pulse Avalanche Energy 

I_AR

E_AR

-6.5

2.5

-22

Avalanche Current 

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

dv/dt

T_J

Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

0.98 (Typical)

For Footnotes, refer to the page 2.

2019-12-10

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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JANTXVF2N7425	INFINEON	获取价格	Rad hard, -100V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300
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JANTXVF2N7431U	INFINEON	获取价格	Rad hard, 60V, 56A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 300 krad(Si)

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