Datasheet > JANTXVF2N7381

JANTXVF2N7381

更新时间： 2023-12-06 20:12:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	492K
描述
Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300 krad(Si) TID, QPL

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JANTXVF2N7381 数据手册

IRHY7230CM (JANSR2N7381)

PD-91273G

Radiation Hardened Power MOSFET

Thru-Hole (TO-257AA)

200V, 9.4A, N-channel, Rad Hard HEXFET™ Technology

Features

Product Summary



Single event effect (SEE) hardened



BV_DSS: 200V

I_D: 9.4A

R_DS(on),max: 0.40

Q_G,max: 50nC

REF: MIL-PRF-19500/614

Low R_DS(on)

Low total gate charge

Simple drive requirements

Hermetically sealed

Electrically isolated

Ceramic eyelets

ESD rating: Class 1C per MIL-STD-750, Method 1020

Potential Applications



DC-DC converter

Motor drives

TO-257AA



Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This

technology has over a decade of proven performance and reliability in satellite applications. These devices have

been characterized for both Total Dose and Single Event Effects (SEE). The combination of low R_DS(on)and low

gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching

and temperature stability of electrical parameters.

Ordering Information

Table 1

Ordering options

Package

Part number

IRHY7230CM

JANSR2N7381

IRHY3230CM

JANSF2N7381

IRHY4230CM

JANSG2N7381

Screening Level

COTS

TID Level

TO-257AA

100 krad(Si)

300 krad(Si)

500 krad(Si)

JANS

COTS

JANS

COTS

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 13

www.infineon.com/irhirel

2022-10-14

12 3 4 5 6 7...13

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